Desorption of chlorine atoms on Si (111)-(7 x 7) surfaces induced by hole injection from scanning tunneling microscope tips

摘要

We investigated desorption of chlorine atoms on Si (111)-(7 x 7) surfaces induced by hole injection from scanning tunneling microscope tips. The hole-induced desorption of chlorine atoms had a threshold bias voltage corresponding to the energy position of the S3 surface band originated in Si backbonds. The chlorine atom desorption rate was almost proportional to the square of the tunneling current. We have discussed possible mechanisms that two holes injected into Si surface states get localized at the backbonds of chlorinated Si adatoms, which induces the rupture of Cl-Si bonds to result in chlorine atom desorption.