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Substrate preparation techniques for direct investigation by TEM of single wall carbon nanotubes grown by chemical vapor deposition

机译:通过TEM直接研究化学气相沉积生长的单壁碳纳米管的基板制备技术

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摘要

We have investigated and evaluated different TEM sample preparation techniques for studying carbon single-walled nanotube (C-SWNT) nucleation and growth, issued from CVD processes when the catalyst is supported on a substrate. This kind of study requires means to observe individual and isolated tubes. It implies using synthesis conditions able to produce only a low density of tubes and to thin the substrate to electron transparency, to observe the nanotubes and the catalytic particles from which they have grown in their native state. We have tested two approaches, depending if the substrate is thinned after or before the synthesis. The low tube density requirement led us to exclude all the techniques where the substrate is thinned to electron transparency after the synthesis. We have shown, that, with this last approach, all TEM preparation techniques dramatically suffer from a lack of control of thin areas with respect to the location of the tubes, which is unknown. However we have demonstrated that the suitable approach is to perform synthesis directly on transparent substrates presenting several holes. We have tested the capabilities and the potentialities of these supports for studying the size distribution and composition of the catalytic particles, the nucleation mode, the diameter and helicity of the tubes. These results are very promising and represent an important step for performing specific nanoscale TEM analyses necessary for the study of the growth mechanism of nanotubes on substrates.
机译:我们已经研究和评估了用于研究碳单壁纳米管(C-SWNT)成核和生长的不同TEM样品制备技术,这些技术是由将催化剂负载在基材上时的CVD工艺产生的。这种研究需要观察单个和孤立的试管的手段。这意味着使用合成条件仅能产生低密度的管子,并使基板变薄至电子透明性,以观察纳米管和以其原始状态生长的催化颗粒。我们测试了两种方法,具体取决于在合成之后还是合成之前将基板减薄。低管密度要求导致我们排除了所有在合成后将基板变薄至电子透明性的技术。我们已经表明,使用最后一种方法,所有TEM制备技术都会显着地遭受到相对于管子位置的薄区域缺乏控制的问题,这是未知的。但是,我们已经证明合适的方法是直接在存在多个孔的透明基板上进行合成。我们已经测试了这些载体的能力和潜力,以研究催化颗粒的尺寸分布和组成,成核模式,管的直径和螺旋度。这些结果是非常有希望的,并且代表了进行特定纳米级TEM分析的重要步骤,该分析是研究基底上纳米管生长机理所必需的。

著录项

  • 来源
    《Surface Science》 |2009年第8期|1115-1120|共6页
  • 作者单位

    Laboratoire d'Etude des Microstructures, ONERA-CNRS-UMR104, 29 Avenue de la Division Leclerc, 92322 Chatillon cedex, France;

    Institut Louis Neel, CNRS-UJF, 25 Avenue des Martyrs, BP166, 38042 Grenoble cedex 9, France;

    Laboratoire des Colloiedes, Verres et Nanomateriaux, UMR5587 CNRS-UM2, Universite Montpellier II, place Eugene Bataillon, 34095 Montpellier cedex 5, France;

    Laboratoire des Colloiedes, Verres et Nanomateriaux, UMR5587 CNRS-UM2, Universite Montpellier II, place Eugene Bataillon, 34095 Montpellier cedex 5, France;

    Laboratoire des Colloiedes, Verres et Nanomateriaux, UMR5587 CNRS-UM2, Universite Montpellier II, place Eugene Bataillon, 34095 Montpellier cedex 5, France;

    Laboratoire d'Etude des Microstructures, ONERA-CNRS-UMR104, 29 Avenue de la Division Leclerc, 92322 Chatillon cedex, France Argonne National Laboratory, Materials Science Division, 9700 S. Cass Ave., Argonne, IL 60439, USA;

    Institut Materiaux Microelectronique Nanosciences de Provence, UMR6242 CNRS, Universite Paul Cezanne Aix-Marseille III, Faculte des Sciences et Techniques de Saint Jerome, 13397 Marseille cedex 20, France;

    Laboratoire d'Etude des Microstructures, ONERA-CNRS-UMR104, 29 Avenue de la Division Leclerc, 92322 Chatillon cedex, France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    carbon nanotubes; growth; membranes; TEM preparation; CVD; ion bombardment; reactive ion etching;

    机译:碳纳米管;增长膜TEM准备;CVD;离子轰击反应离子蚀刻;

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