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Peierls-like phase transitions in domain walls

机译:畴壁中的类似Peierls的相变

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摘要

In this paper, we give an example how domain walls (DW) within an adsorbed monolayer form one-dimensional localized electronic states. We investigated in detail the Ag 3~(1/2) × 3~(1/2) phase on Si (111), a proto type system for a low dimensional electron gas, by means of scanning tunneling microscopy. The doubling of the periodicity along the DW-direction at low temperatures (80 K) suggests a metal-insulator transition of Peierls type. The superimposed intensity modulation in the direction across the DW can be interpreted in terms of lateral quantum well states. However, the simultaneous vanishing of both features at room temper ature indicates more complicated changes in band structure and/or wave functions during the transition than described by the simple Peierls model.
机译:在本文中,我们举一个例子说明吸附的单分子层内的畴壁(DW)如何形成一维局部电子态。通过扫描隧道显微镜,我们详细研究了低维电子气原型系统Si(111)上的Ag 3〜(1/2)×3〜(1/2)相。在低温(80 K)下,沿DW方向的周期性加倍表明Peierls型金属-绝缘体转变。可以通过横向量子阱状态来解释在DW方向上的叠加强度调制。但是,两个特征在室温下的同时消失表明,在转变过程中,带结构和/或波函数的变化比简单Peierls模型所描述的更为复杂。

著录项

  • 来源
    《Surface Science》 |2012年第4期|p.362-366|共5页
  • 作者单位

    Institutfilr Festkoerperphysik, Leibniz UniversitSt Hannover, Appelstrasse 2, 30167 Hannover, Germany;

    Institutfilr Festkoerperphysik, Leibniz UniversitSt Hannover, Appelstrasse 2, 30167 Hannover, Germany;

    Institutfilr Festkoerperphysik, Leibniz UniversitSt Hannover, Appelstrasse 2, 30167 Hannover, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    STM; domain wall; metal semiconductor interface; peierls transition;

    机译:STM;畴壁金属半导体接口;佩尔尔斯过渡;
  • 入库时间 2022-08-18 03:05:17

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