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Dim C_(60) fullerenes on Si( 111) (√3) × (√3) - Ag surface

机译:Si(111)(√3)×(√3)-Ag表面的C_(60)富勒烯昏暗

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摘要

Scanning tunneling microscopy (STM) observations of the dose-packed C_(60) fullerene arrays on Si(lll) (√3) × (√3) - Ag surface have revealed the presence of dim C_(60) molecules which constitute 9-12% of all fullerenes. The dim C_(60) fullerenes reside -1.6 A lower than the bright ("normal") C_(60). While the bright C_(60) are in continuous rotation, the dim C_(60) are fixed in one of the single orientations, indicating a more tight bonding to the surface. At room temperature (RT), the dynamic switching from bright to dim C_(60) and vice versa has been detected. Switching slows down with decreasing temperature and becomes completely frozen at 110 K, which implies that the switching is a thermally driven process. RT deposition of~0.1 monolayer of Ag onto C_(60) array eliminates completely the dim C_(60) molecules. Experimental results can be understood if one assumes that formation of the dim C_(60) is associated with disintegration of Ag trimer onSi(111) (√3) × (√3) - Ag surface under a given C_(60) fullerene.
机译:在Si(III)(√3)×(√3)-Ag表面上剂量堆积的C_(60)富勒烯阵列的扫描隧道显微镜(STM)观察表明存在构成9-所有富勒烯的12%。昏暗的C_(60)富勒烯比明亮的(“正常”)C_(60)低-1.6A。当明亮的C_(60)连续旋转时,暗淡的C_(60)固定在单个方向之一上,表明与表面的粘合更紧密。在室温(RT)下,已检测到从亮C_(60)到暗C_(60)的动态切换,反之亦然。随着温度的降低,切换速度变慢,并在110 K时完全冻结,这意味着切换是一个热驱动过程。将Ag的〜0.1单层RT沉积到C_(60)阵列上完全消除了昏暗的C_(60)分子。如果假设在给定的C_(60)富勒烯下,Si(111)(√3)×(√3)-Ag表面上的Ag三聚体的分解与钝化C_(60)的形成有关,则可以理解实验结果。

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  • 来源
    《Surface Science》 |2013年第6期|31-36|共6页
  • 作者单位

    Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia;

    Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia;

    Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia;

    Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia;

    Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia;

    Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166 Taipei, Taiwan;

    Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166 Taipei, Taiwan;

    Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166 Taipei, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    atom-solid interactions; silicon; fullerene; surface diffusion; scanning tunneling microscopy; density functional calculations;

    机译:原子-固体相互作用硅;富勒烯表面扩散扫描隧道显微镜密度泛函计算;

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