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The hydroxylated and reduced rutile TiO_2(011)-2 × 1 surfaces: A first-principles study

机译:羟基化和还原的金红石型TiO_2(011)-2×1表面:第一性原理研究

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摘要

The hydroxylated and reduced rutile TiO_2(011 )-2 × 1 surfaces have been investigated by means of first-principles density functional theory calculations. For the H adsorption and 0 vacancy on the rutile TiO_2(011)-2 × 1 surface, we investigated three different surface O sites. Based on the adsorption and formation energy calculations, we find that the top O is an energetically preferential site for the adsorption of H atom or the formation of O vacancy. The calculated electronic structures indicate that the energetically preferential O site cannot create a band gap state; only the O vacancy at the side O site gives rise to a Ti-3d like defect level at the edge of the conduction band. It is worth mentioning that all considered configurations of the H adsorption and O vacancy on the rutile TiO_2(011)-2 × 1 surface obviously enhance the optical absorptions in the areas of infrared, not just the rutile TiO_2(011)-2 × 1 surface only has a good absorption edge in the visible light region.
机译:通过第一性原理密度泛函理论计算研究了羟基化和还原的金红石型TiO_2(011)-2×1表面。对于金红石型TiO_2(011)-2×1表面的H吸附和0空位,我们研究了三个不同的表面O位。基于吸附和形成能的计算,我们发现顶部的O是吸附H原子或形成O空位的能量优先位。计算出的电子结构表明,在能量上优先的O位点不能产生带隙状态。只有在O侧面的O空位会在导带边缘产生类似Ti-3d的缺陷能级。值得一提的是,所有考虑的金红石TiO_2(011)-2×1表面上的H吸附和O空位构型均明显增强了红外区域的光吸收,而不仅仅是金红石TiO_2(011)-2×1表面仅在可见光区域具有良好的吸收边缘。

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  • 来源
    《Surface Science》 |2014年第10期|126-131|共6页
  • 作者单位

    School of Science, Henan Institute of Engineering, Zhengzhou 451191, PR China,School of Chemistry, Beijing Institute of Technology, Beijing 100081, PR China;

    School of Chemistry, Beijing Institute of Technology, Beijing 100081, PR China;

    School of Chemistry, Beijing Institute of Technology, Beijing 100081, PR China;

    School of Chemistry, Beijing Institute of Technology, Beijing 100081, PR China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Hydrogen adsorption; Oxygen vacancy; Electronic properties; Optical properties;

    机译:氢吸附;氧气空位;电子性能;光学性质;

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