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Characterization and dielectric properties of vacuum-deposited zinc phthalocyanine thin film

机译:真空沉积锌酞菁薄膜的表征和介电性能

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The present paper reports the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) thin films which were grown by the thermal evaporation technique at different substrate temperatures of 312, 363 and 413 K and dielectric response of sandwich geometry of ZnPc thin films have also been studied within frequency range 1 Hz–50 KHz. The crystal structures of these ZnPc films have been characterized using the X-ray diffraction technique. Raman spectra and photoluminescence have been recorded to study the molecular orientations in the ZnPc films for different substrate temperatures. The absorption spectra of the ZnPc films have shown two absorption bands – namely, the Soret band and Q-band. The activation energy values of these films have been determined to be lying in the range of 0·70–0·75 eV. Hole mobility values of ZnPc films have been calculated by using differential susceptance method. The capacitance and dielectric constant have been found to decrease with increase in frequency.
机译:本文报道了通过热蒸发技术在312、363和413 K的不同衬底温度下生长的酞菁锌(ZnPc)薄膜的结构,光学和电学性质,以及ZnPc薄膜的夹心几何形状的介电响应也具有在1 Hz–50 KHz的频率范围内进行了研究。这些ZnPc薄膜的晶体结构已使用X射线衍射技术进行了表征。记录拉曼光谱和光致发光以研究不同衬底温度下ZnPc膜的分子取向。 ZnPc薄膜的吸收光谱显示出两个吸收带– Soret带和Q带。这些薄膜的活化能值已确定在0·70-0·75 eV范围内。 ZnPc薄膜的空穴迁移率值是采用微分电纳法计算的。已经发现,电容和介电常数随频率的增加而减小。

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  • 来源
    《Surface Innovations》 |2018年第2期|63-70|共8页
  • 作者单位

    Research scholar, Department of Applied Sciences, I.K. Gujral Punjab Technical University, Kapurthala, India;

    Associate Professor, P.G. Department of Physics, D.A.V. College, Amritsar, India;

    Professor, Department of Applied Sciences, Beant College of Engineering and Technology Gurdaspur, Gurdaspur, India;

    Assistant Professor, P.G. Department of Physics, D.A.V. College, Amritsar, India;

    Associate Professor, P.G. Department of Physics, D.A.V. College, Jalandhar, India;

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