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机译:两个电子GaN / AlN常数总有效半径多壳量子环的子带间光学特性
Department of Physics, Faculty of Sciences, Qom University of Technology, Qom, Iran;
Department of Physics, Faculty of Sciences, Qom University of Technology, Qom, Iran;
Department of Physics, Faculty of Sciences, Qom University of Technology, Qom, Iran;
Two electron GaN/AlN constant total effective radius multi-shells quantum rings; Wave function engineering by tuning of the number of wells and the ring radius; Linear absorption coefficient; Linear refractive index changes;
机译:两电子GaN / AlN常数总有效半径多壳量子环的非线性光学吸收
机译:磁场对具有恒定总有效半径的GaN / AlN多阱量子环和点的线性光学特性的影响
机译:GaN / AlN常数总有效半径多量子阱的光学性质
机译:原子和内极化对GaN / AlN量子点的电子和光学性质的影响:数百万原子耦合的VFF MM-sp 3 sup> d 5 sup> s ∗ < / sup>紧密绑定模拟
机译:GaN,ZnO和(GaN)1-x(ZnO)x的结构,电子和光学性质的第一性原理研究。
机译:通过金属有机化学气相沉积法生长具有不同夹层的高Al含量AlxGa1-xN / GaN多量子阱的子带间吸收特性
机译:静态外磁场下GaN / AlN多量子阱的电子和光学性质。