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首页> 外文期刊>Optical and quantum electronics >Magnetic field effects on linear optical properties of GaN/ AlN multi-wells quantum rings and dots with constant total effective radiuses
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Magnetic field effects on linear optical properties of GaN/ AlN multi-wells quantum rings and dots with constant total effective radiuses

机译:磁场对具有恒定总有效半径的GaN / AlN多阱量子环和点的线性光学特性的影响

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摘要

In this work, we have studied the effect of external magnetic field on linear absorption coefficient of AIN/GaN constant total effective radius multi-wells quantum ring and dots. These properties have been investigated for systems with different number of wells, quantum ring thickness and dot radiuses. We showed that, the absorption peak amplitude increases sensibly when outer quantum ring radius R_(out) increases. Effect of the inner quantum ring radius R_(in) was different. For systems with small R_(in), by increasing of the number of wells the absorption peak amplitude at first decreases and then increases. The threshold number of wells by increasing of the R_(in) decreases. For systems with large R_(in) the absorption peak amplitude increases monotonically. Increasing of R_(in) at fixed R_(out) also reduces the absorption peak amplitude and change of the R_(out) does not affect on this fact. Finally, effect of the magnetic field on the absorption peak amplitude depends on the R_(out), R_(in) and the number of wells. In the meantime, There is not a unique trend when one of these parameters changes. However, effect of the magnetic field is more remarkable for systems with larger number of wells.
机译:在这项工作中,我们研究了外部磁场对AIN / GaN常数总有效半径多孔量子环和点的线性吸收系数的影响。对于具有不同数量的阱,量子环厚度和点半径的系统,已经研究了这些性质。我们表明,当外部量子环半径R_(out)增大时,吸收峰幅度会明显增大。内部量子环半径R_(in)的影响是不同的。对于具有较小R_(in)的系统,通过增加孔的数量,吸收峰的幅度首先会减小,然后增大。通过增加R_(in)可以减少井的阈值数量。对于R_(in)大的系统,吸收峰幅度单调增加。在固定的R_(out)处增加R_(in)也会减小吸收峰幅度,并且R_(out)的变化不会影响这一事实。最后,磁场对吸收峰幅度的影响取决于R_(out),R_(in)和阱数。同时,当这些参数之一发生变化时,没有唯一的趋势。但是,对于具有更多孔的系统,磁场的影响更为明显。

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