CONTROL SPIN CURRENT AND DATA RECORDING ON SPIN STORAGE MEDIUM

摘要

The paper presents the results of experimental studies of the physical mechanisms and dynamicsrnof magnetization reversal of the films Al_2O_3/Tb_(25)Co_5Fe_(70)/Al_2O_3, Al_2O_3/Tb_(22)Co_5Fe_(73)/Al_2O_3,Al_2O_3/Tb_(19)Co_5Fe_(76)/Al_2O_3, Al_2O_3/Co_(30)Fe_(70)/Al_2O_3 with a single magnetic layer and the films Al_2O_3/Tb_(22)Co_5Fe_(73)/Pr_6O_(11)/Tb_(19)Co_5Fe_(76)/Al_2O_3, Al_2O_3/Co_(80)Fe_(20)/Pr_6O_(11)/Co_(30)Fe_(70)/Al_2O_3 with two magnetic layers radiated by picosecond (T_i≈80 ps) and femtosecond (T_i≈130 fs) laser pulses. The experimental samples of spin transistors and data recording devices on the spinrnstorage medium are also described. The results of studies have shown that magnetic switchingrneffects in the nanolayers under femtosecond laser pulses can be used for creation of systems ofrnhigh-speed controlling of spin currents with the response time u0001T=10~(-11)s. Conclusions from thernstudies are the following: thermomagnetic switching under the influence of an external magneticrnfield or a demagnetization field, magnetic switching of antiferromagnetic films under therninfluence of an effective internal field of antiferromagnetic interaction between magnetic sublatticesrnrare-earth and transitive metals, magnetic switching under the influence of a magneticrnfield of the inverse Faraday effect, or under the influence of a magnetic field of a spin current.rnThe magnetic switching of magnetic layers under action of the magnetic field of a spin currentrnis the most important for practical use in elements of spintronics. This mechanism of magneticrnreversal takes place only in multilayer nanofilms and the heterogeneous multilayer magneticrnnanofilms are the base material for creation of spintronic devices. The great advantage of thernmagnetization reversal of magnetic nanolayers of the spin current is that the mechanism ofrnmagnetization reversal is working in the films with perpendicular anisotropy and in the filmsrnwith in-plane anisotropy. The injection of polarized electrons can also be realized using shortrnelectrical pulses. That is why the mechanism of magnetization reversal of the control electrodesrnspin current is the most appropriate for the management of high-spin current in the elements ofrnspintronics. On the basis of this mechanism, we have realized the high-speed recording ofrninformation on the spin carrier and the experimental model memory with three magneticrnnanolayers. The data recording in this memory cell is realized using an electric nanosecondrnpulse.