机译:确定阳极氧化电流密度的多孔硅的光学,弹性和声学性质
Department of Physics, Virudhunagar Hindu Nadars' Senthikumara Nadar College, Virudhunagar-626 001, Tamilnadu, India;
Department of Physics, Virudhunagar Hindu Nadars' Senthikumara Nadar College, Virudhunagar-626 001, Tamilnadu, India;
Department of Physics, Virudhunagar Hindu Nadars' Senthikumara Nadar College, Virudhunagar-626 001, Tamilnadu, India;
Department of Physics, Virudhunagar Hindu Nadars' Senthikumara Nadar College, Virudhunagar-626 001, Tamilnadu, India;
Department of Physics, Raja Duraisingam Government Arts College, Sivagangai-630 561, Tamilnadu, India;
Department of Physics, Virudhunagar Hindu Nadars' Senthikumara Nadar College, Virudhunagar-626 001, Tamilnadu, India;
porous silicon; photoluminescence; refractive index; elastic constants; acoustic parameters;
机译:n型多孔硅的形貌和光学性质:蚀刻电流密度的影响
机译:n型多孔硅的形貌和光学性质:蚀刻电流密度的影响
机译:刻蚀电流密度对多孔硅(PS):n-Si异质结构的微观结构,光学和电学性质的影响
机译:多孔硅的阳极氧化电流密度独立光致发光
机译:使用随时间变化的电流密度泛函理论研究薄膜半导体的整体光学和电子特性,作为晶格参数变化的函数。
机译:面向超稳定高电流密度锂金属阳极的二维分子刷功能化多孔双层复合隔板
机译:声透射光谱研究多孔硅的弹性