An efficient channel segmentation approach for a large-signal NQS MOSFET model

摘要

This paper presents an efficient formulation of a channel segmentation based approach to non-quasi-static modelling of the MOS transistor, in the context of a charge-based MOSFET model. In this minimal channel segmentation approach, only the essential charge equations are evaluated for each channel segment while other effects are handled at device level. As a result, simulation time is drastically reduced compared to a full channel segmentation approach. The model is validated versus measurement up to 10 GHz and passes relevant benchmark tests.