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Correlation between degree of crystallinity and transition field in electric or magnetic field-induced insulator-metal transition of Pr_(0.5)Ca_(0.5)MnO_3 thin films

机译:Pr_(0.5)Ca_(0.5)MnO_3薄膜在电场或磁场诱导的绝缘体-金属跃迁中的结晶度与跃迁场的相关性

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摘要

Degree of crystallinity (DOC) effect onto electric and magnetic field-induced insulator-metal (IM) transition of Pr_(0.5)Ca_(0.5)MnO_3 (PCMO) thin films was studied. The films with various DOC were prepared by a pulsed laser deposition method, varying the substrate materials (single crystalline MgO or amorphous SiO_2) and the deposition temperature (600 or 750℃). Planer-type junctions were fabricated with these films for the observation of IM transition. In electric field-induced IM transition, there was a tendency that the films with lower DOC show lower transition field. In the magnetic field, on the other hand, the film of higher DOC showed an IM transition under lower field, in contrast to the case of the electric field.
机译:研究了结晶度(DOC)对Pr_(0.5)Ca_(0.5)MnO_3(PCMO)薄膜的电场和磁场诱导的绝缘体-金属(IM)过渡的影响。通过脉冲激光沉积法制备具有各种DOC的薄膜,改变衬底材料(单晶MgO或非晶SiO_2)和沉积温度(600或750℃)。用这些膜制作了平面型结,用于观察IM过渡。在电场引起的IM跃迁中,存在具有较低DOC的膜表现出较低跃迁场的趋势。另一方面,在磁场中,与电场的情况相比,较高DOC的膜在较低电场下显示出IM跃迁。

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