An 8-bit-resolution, 360-Μs write time nonvolatile analog memorybased on differentially balanced constant-tunneling-current scheme(DBCS)

摘要

This paper describes a fast and accurate nonvolatile analog memoryn(NVAM) and its programming scheme. Both constant programming rate andnsingle-pulse programmability have been achieved, which drasticallynenhance programming speed and accuracy. A prototype chip containingn8×128 NVAM cells (cell size of 9×13.6 Μm2) hasnbeen fabricated using 0.8-Μm CMOS. Each cell is measured to storenmore than eight bit levels within 360 Μs