An integrated silicon bipolar receiver subsystem for 900-MHz ISM band applications

摘要

A wide-band dual conversion receiver subsystem is presented which is suitable for 900-MHz portable wireless applications including cordless telephony. The circuit features 118 dB of dynamic range and is operable from 6.5 V down through 2.7 V while consuming 26 mA. The receiver utilizes the MOSAIC V radio frequency (RF) silicon bipolar process and features an LNA, two mixers, two oscillators, second LO amplifier, dual modulus prescaler, LF amplifier, RSSI, coilless demodulator, and power down control.