Advanced controlling scheme for a DRAM voltage generator system

摘要

An brief overview is given of the voltage generator system of an1-Gb synchronous DRAM. The design serves as an example for anstate-of-the-art DRAM voltage generator system. A general analysis ofnthe required controlling functionality is derived. A universal andnflexible controlling scheme for a voltage generator system is presented,nwhich can easily be modified for future voltage generator design. Thenmain aspect of this controlling scheme is a clear separation betweennlogic (digital) controlling functions and (analog) voltage generatingnfunctions. A control path that supplies the various voltage generatornblocks with configuration information is introduced. Last, the controlnpath is shown to have an additional advantage of increased testability.nHardware results verifying the concept are presented