...
首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.0-V 230-MHz column access embedded DRAM for portable MPEGapplications
【24h】

A 1.0-V 230-MHz column access embedded DRAM for portable MPEGapplications

机译:适用于便携式MPEG应用的1.0V 230MHz列访问嵌入式DRAM

获取原文
获取原文并翻译 | 示例
           

摘要

This paper describes a 32-Mb embedded DRAM macro fabricated usingn0.13-Μm triple-well 4-level Cu embedded DRAM technology, which isnsuitable for portable equipment of MPEG applications. This macro cannoperate 230-MHz random column access even at 1.0-V power supplyncondition. The peak power consumption is suppressed to 198 mW in burstnoperation. The power-down standby mode, which suppresses the leakagencurrent consumption of peripheral circuitry, is also prepared fornportable equipment. With the collaboration of array circuit design andnthe fine Cu metallization technology, macro size of 18.9 mm2nand cell efficiency of 51.3% are realized even with dual interface andntriple test functions implemented
机译:本文介绍了一种使用n0.13μm三阱4级Cu嵌入式DRAM技术制造的32 Mb嵌入式DRAM宏,它不适合MPEG应用的便携式设备。即使在1.0 V电源条件下,该宏也无法操作230 MHz随机列访问。在突发操作中,峰值功耗被抑制为198 mW。还为便携式设备准备了掉电待机模式,该模式可以抑制外围电路的泄漏电流消耗。通过阵列电路设计和精细的铜金属化技术的协作,即使实现了双接口和三重测试功能,也可实现18.9 mm2 n的宏观尺寸和51.3%的电池效率

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号