首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 90-nm FPGA I/O Buffer Design With 1.6-Gb/s Data Rate for Source-Synchronous System and 300-MHz Clock Rate for External Memory Interface
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A 90-nm FPGA I/O Buffer Design With 1.6-Gb/s Data Rate for Source-Synchronous System and 300-MHz Clock Rate for External Memory Interface

机译:90纳米FPGA I / O缓冲器设计,源同步系统的数据速率为1.6 Gb / s,外部存储器接口的时钟速率为300 MHz

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As FPGAs integrate into high-speed systems, performance and signal integrity become more important in I/O design. This paper describes the development of an FPGA design to support 1.6 Gb/s differential source-synchronous standards and 300 MHz external memory interfaces. Speed and performance were achieved using circuits such as differential level-shifters with voltage and temperature compensated current sources, on-chip decoupling capacitors, and floating-well output buffers. Programmable drive strength, output impedance matching, hot-socketing compliance, and 3.3-V voltage tolerance are features of the I/O buffer. In addition, DLLs and programmable phase-offset circuits were used to obtain precise timing control. The chip was manufactured on a 90-nm CMOS process.
机译:随着FPGA集成到高速系统中,性能和信号完整性在I / O设计中变得越来越重要。本文描述了一种FPGA设计的开发,该设计支持1.6 Gb / s差分源同步标准和300 MHz外部存储器接口。使用具有电压和温度补偿电流源的差分电平转换器,片上去耦电容器和浮阱输出缓冲器等电路可实现速度和性能。可编程的驱动强度,输出阻抗匹配,热插拔兼容性和3.3V电压容差是I / O缓冲器的功能。此外,DLL和可编程相位偏移电路用于获得精确的时序控制。该芯片采用90纳米CMOS工艺制造。

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