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机译:具有可扩展的八位位线和传感方案的1.6 GB / s DDR2 128 Mb链FeRAM
Toshiba Corp. Semicond. Co., Yokohama, Japan;
CMOS digital integrated circuits; DRAM chips; CMOS process; DDR2 FeRAM memory cell; SDRAM compatible DDR2 interface; bandwidth 400 MHz; bit rate 1.6 Gbit/s; capacitance 100 fF to 60 fF; ferroelectric random access memory; parasitic capacitance sensing scheme; scalable octal bitline architecture; size 130 nm; time 2 ns; voltage -220 mV; voltage 220 mV; voltage 50 mV; FeRAM; RAM; ferroelectric memory; nonvolatile memory; random access memory;
机译:FeRAM概述和1.6GB / s DDR2 128Mb链FeRAM
机译:FeRAM和1.6GB / s DDR2 128Mb链概述FeRAM_®
机译:Feram概述和1.6GB / s DDR2 128MB Chain Feram
机译:具有可扩展的八位位线和传感方案的1.6GB / s DDR2 128Mb链FeRAM
机译:精炼金伯利进程:分析认证方案的失败和区块科技作为解决方案的探索
机译:FairCs-使用受信任的执行环境的基于区块链的公平众筹方案
机译:采用分层位线和晶闸管读出放大器的128kb高密度无端口sRam