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A Resolution-Reconfigurable 5-to-10-Bit 0.4-to-1 V Power Scalable SAR ADC for Sensor Applications

机译:分辨率可重新配置的5至10位0.4至1 V电源可扩展SAR ADC,适用于传感器应用

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摘要

A power-scalable SAR ADC for sensor applications is presented. The ADC features a reconfigurable 5-to-10-bit DAC whose power scales exponentially with resolution. At low resolutions where noise and linearity requirements are reduced, supply voltage scaling is leveraged to further reduce the energy-per-conversion. The ADC operates up to 2 MS/s at 1 V and 5 kS/s at 0.4 V, and its power scales linearly with sample rate down to leakage levels of 53 nW at 1 V and 4 nW at 0.4 V. Leakage power-gating during a SLEEP mode in between conversions reduces total power by up to 14% at sample rates below 1 kS/s. Prototyped in a low-power 65 nm CMOS process, the ADC in 10-bit mode achieves an INL and DNL of 0.57 LSB and 0.58 LSB respectively at 0.6 V, and the Nyquist SNDR and SFDR are 55 dB and 69 dB respectively at 0.55 V and 20 kS/s. The ADC achieves an optimal FOM of 22.4 fJ/conversion-step at 0.55 V in 10-bit mode. The combined techniques of DAC resolution and voltage scaling maximize efficiency at low resolutions, resulting in an FOM that increases by only 7x over the 5-bit scaling range, improving upon a 32x degradation that would otherwise arise from truncation of bits from an ADC of fixed resolution and voltage.
机译:<?Pub Dtl?>提出了一种用于传感器应用的可扩展功率的SAR ADC。 ADC具有可重配置的5至10位DAC,其功率与分辨率成指数关系。在降低了噪声和线性要求的低分辨率下,可以利用电源电压缩放来进一步降低每次转换的能量。 ADC在1 V时以2 MS / s的速度运行,在0.4 V时以5 kS / s的速度运行,其功率与采样率呈线性比例关系,在1 V和0.4 V时泄漏率降至53 nW和4 nW泄漏水平。漏电门控在两次转换之间的休眠模式下,采样率低于1 kS / s时,总功耗最多降低14%。以低功耗65 nm CMOS工艺为原型,处于10位模式的ADC在0.6 V时的INL和DNL分别为0.57 LSB和0.58 LSB,而Nyquist SNDR和SFDR在0.55 V时分别为55 dB和69 dB和20 kS / s。在10位模式下,ADC在0.55 V时达到22.4 fJ /转换步长的最佳FOM。 DAC分辨率和电压缩放的组合技术可在低分辨率下最大程度地提高效率,从而使FOM在5位缩放范围内仅增加7倍,从而改善了32x降级,否则会由于固定ADC的位被截断而降低分辨率和电压。

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