首页> 外文期刊>Solid-State Circuits, IEEE Journal of >Design of Transformer-Based Boost Converter for High Internal Resistance Energy Harvesting Sources With 21 mV Self-Startup Voltage and 74% Power Efficiency
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Design of Transformer-Based Boost Converter for High Internal Resistance Energy Harvesting Sources With 21 mV Self-Startup Voltage and 74% Power Efficiency

机译:具有21 mV自启动电压和74%功率效率的高内阻能量采集源的基于变压器的Boost转换器的设计

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摘要

Thin-film thermoelectric generators (TEG) or graphene-based microbial fuel cells (MFC) are emerging energy harvesting sources with promising power density and sustainability. Nevertheless, conventional transformer-based boost converters commonly used to achieve autonomous low voltage startup encounter low efficiency and potential startup problems with these novel power sources due to their high internal resistance. In this paper, an improved design of transformer-based boost converter addressing these issues is demonstrated with prototype chip fabricated using a standard 0.13 µm CMOS process. The self-start oscillation does not rely on the conventional LC resonant principle, but instead is dependent on the MOS transistor's active-over-leakage current ratio and the mutual coupling between the two identical transformer coils. Circuit design techniques to regulate output voltage and to track system's maximum power point (MPP) of this boost converter are presented. Measurement results confirmed that the proposed circuit works with either low threshold voltage or native MOS transistors. It needs minimum self-startup voltage of 21 mV (at 5.8 µW input power) and minimum startup power of 1.3 µW (at 35 mV input voltage) respectively. The maximum output power is 2 mW and peak power conversion efficiency is 74% at a regulated output voltage of 1 V.
机译:薄膜热电发生器(TEG)或基于石墨烯的微生物燃料电池(MFC)是新兴的能量收集源,具有可观的功率密度和可持续性。然而,由于其高内部电阻,通常用于实现自主低压启动的常规基于变压器的升压转换器在这些新型电源上遇到效率低下和潜在的启动问题。在本文中,使用标准0.13 µm CMOS工艺制造的原型芯片展示了针对这些问题的基于变压器的升压转换器的改进设计。自启动振荡不依赖于传统的LC谐振原理,而是依赖于MOS晶体管的有源漏电流比和两个相同的变压器线圈之间的相互耦合。提出了用于调节输出电压并跟踪该升压转换器的系统最大功率点(MPP)的电路设计技术。测量结果证实,该电路可在低阈值电压或本机MOS晶体管下工作。它需要的最小自启动电压为21 mV(在5.8 µW输入功率下),最小的启动功率为1.3 µW(在35 mV输入电压下)。在1 V的稳定输出电压下,最大输出功率为2 mW,峰值功率转换效率为74%。

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