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An Oversampling SAR ADC With DAC Mismatch Error Shaping Achieving 105 dB SFDR and 101 dB SNDR Over 1 kHz BW in 55 nm CMOS

机译:具有DAC不匹配误差整形的过采样SAR ADC在55 nm CMOS中在1 kHz BW上可实现105 dB SFDR和101 dB SNDR

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摘要

The successive-approximation-register (SAR) architecture is well known for its high power efficiency in medium-resolution analog-to-digital converters (ADCs). However, when considered for high-precision applications, SAR ADCs suffer from non-linearity resulting from capacitor mismatch and limited dynamic range due to comparator noise. This work presents a mismatch error shaping (MES) technique for oversampling SAR ADCs to achieve 105 dB in-band SFDR without calibration. The capacitor mismatch error is first-order high-pass filtered by simply delaying the reset of LSB capacitor array after sampling. The comparator thermal and flicker noise are also first-order shaped to high frequencies by noise shaping. The prototype in 55 nm CMOS occupies 0.072 mm2 and achieves a peak SNDR of 101 dB over 1 kHz bandwidth. It consumes 15.7 μW from a 1.2 V supply at 1 MS/s and can be configured to Nyquist mode up to 5 MS/s. These features enable the application of SAR ADCs in high-precision, multi-purpose sensor readout interfaces.
机译:逐次逼近寄存器(SAR)架构以其在中等分辨率的模数转换器(ADC)中的高功率效率而闻名。但是,在考虑用于高精度应用时,SAR ADC会因电容器失配和比较器噪声导致的动态范围受限而导致非线性。这项工作提出了一种不匹配误差整形(MES)技术,用于对SAR ADC进行过采样,从而无需校准即可获得105 dB的带内SFDR。只需在采样后简单延迟LSB电容器阵列的复位,即可对电容器失配误差进行一阶高通滤波。通过噪声整形,比较器的热噪声和闪烁噪声也被一阶整形为高频。采用55 nm CMOS的原型占地0.072 mm2,在1 kHz带宽上达到101 dB的峰值SNDR。它从1.2 V电源以1 MS / s的速率消耗15.7μW,并且可以配置为高达5 MS / s的奈奎斯特模式。这些功能使SAR ADC可以在高精度,多功能传感器读出接口中应用。

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