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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A 0.3 pJ/bit 20 Gb/s/Wire Parallel Interface for Die-to-Die Communication
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A 0.3 pJ/bit 20 Gb/s/Wire Parallel Interface for Die-to-Die Communication

机译:一个0.3 pJ / bit 20 Gb / s /线并行接口,用于芯片间通信

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摘要

A high-density low-power parallel I/O for die-to-die communication is presented. The proposed interface includes a low-power transceiver and a high-density low-cost silicon interposer. The link architecture exploits single-sided and capacitive termination, passive equalization in the transmitter, and CMOS logic-style circuits to reduce the power consumption. To achieve a high bump/wire efficiency, single-ended signaling is used. A 4-layer Aluminum silicon interposer is fabricated providing 2.5 mm and 3.5 mm links between prototype transceivers. The transceiver prototype includes 3 transmitters and 3 receivers fabricated in 28 nm STM FD-SOI CMOS technology. The parallel interface operates at 20 Gb/s/wire and 18 Gb/s/wire data rates over the 2.5 mm and 3.5 mm channels with 5.9 and 7.7 dB of loss relative to DC (10.7 and 13.5 dB total loss) at fbit /2 while consuming 0.30 and 0.32 pJ/bit excluding clocking circuits, respectively.
机译:提出了一种用于管芯到管芯通信的高密度,低功耗并行I / O。拟议的接口包括一个低功耗收发器和一个高密度低成本硅中介层。链接架构利用单侧和电容式终端,发送器中的无源均衡和CMOS逻辑式电路来降低功耗。为了实现高的凸块/导线效率,使用了单端信令。制造了4层铝硅中介层,可在原型收发器之间提供2.5 mm和3.5 mm的链路。该收发器原型包括采用28 nm STM FD-SOI CMOS技术制造的3个发射器和3个接收器。并行接口在2.5 mm和3.5 mm通道上以20 Gb / s /线和18 Gb / s /线的数据速率工作,相对于fbit / 2的DC损耗为5.9和7.7 dB(总损耗为10.7和13.5 dB)而不包括时钟电路的功耗分别为0.30和0.32 pJ / bit。

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