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A Wideband RF Mixing-DAC Achieving IMD < -82 dBc Up to 1.9 GHz

机译:高达1.9 GHz的IMD <-82 dBc的宽带RF混合DAC

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This paper presents a highly linear wideband Mixing-DAC architecture. A current-steering DAC core and a mixer are co-integrated at a unit current-cell level. A 1 bit DAC output stage is cascoded by a 1 bit mixer to form the Mixing-DAC current cell. An array of such current cells and a system front-end construct the Mixing-DAC. The system front-end includes digital signal processing and data synchronization, global LO driver and sort-and-combine calibration hardware. To reach high linearity, various techniques are used: digital dither, self measurement and calibration of amplitude and timing errors, local advanced cascoding scheme, bleeding currents, segmentation and accurate scaling of the LSB binary current cells. The proposed approach is validated by a 65 nm CMOS test-chip of a dual 16 bit 2 GS/s 4 GHz Mixing-DAC with IMD <; -82 dBc up to 1.9 GHz and output noise lower than -165 dBm/Hz.
机译:本文提出了一种高度线性的宽带混合DAC架构。电流控制DAC内核和混频器在单元电流单元级别上共集成。 1位混频器级联1位DAC输出级,以形成Mixing-DAC电流单元。这种当前单元的阵列和系统前端构成了Mixing-DAC。该系统前端包括数字信号处理和数据同步,全局LO驱动器以及排序和组合校准硬件。为了达到高线性度,使用了各种技术:数字抖动,幅度和定时误差的自我测量和校准,本地高级共源共栅方案,泄漏电流,LSB二进制电流单元的分段和精确缩放。所建议的方法已通过具有IMD <;的双16位2 GS / s 4 GHz混合DAC的65 nm CMOS测试芯片进行了验证。最高1.9 GHz时为-82 dBc,输出噪声低于-165 dBm / Hz。

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