首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 0.53-THz Subharmonic Injection-Locked Phased Array With 63- $mu$ W Radiated Power in 40-nm CMOS
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A 0.53-THz Subharmonic Injection-Locked Phased Array With 63- $mu$ W Radiated Power in 40-nm CMOS

机译:具有63- $ mu $ W辐射功率的0.53 THz次谐波注入锁定相控阵在40纳米CMOS中

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摘要

This paper presents a 0.53-THz subharmonic injection-locked 1x4 phased array based on an injection-locked oscillator (ILO) chain. Thanks to the ILO chain, the phase errors in the phased array can be compensated without introducing power variation. This technique enables accurate beam steering with a 60 degrees scan range in the E-plane at 0.53 THz. A six-stage triple-push oscillator is proposed to generate the signal at 0.53 THz. Compared with a conventional triple-push oscillator, it reduces layout constraints, improves signal balance, and enhances output power by at least 3 dB. The phased array is implemented in 40-nm CMOS. With an injection power of 0 dBm, the injection-locked phased array generates an output frequency from 529 to 534 GHz. At 531.5 GHz, the proposed phased array achieves -12-dBm radiated power and 0.24% dc-to-terahertz (THz) efficiency without the use of silicon lens, quartz superstrate, or substrate thinning. The chip consumes 260-mW dc power and occupies an area of 2.5 mm(2).
机译:本文提出了一种基于注入锁定振荡器(ILO)链的0.53 THz次谐波注入锁定1x4相控阵。借助ILO链,可以在不引入功率变化的情况下补偿相控阵中的相位误差。此技术可在E平面上以0.53 THz的60度扫描范围实现精确的光束转向。提出了一个六级三重推挽振荡器来产生0.53 THz的信号。与传统的三重推挽振荡器相比,它减少了布局约束,改善了信号平衡,并提高了至少3 dB的输出功率。相控阵在40纳米CMOS中实现。注入锁定相控阵以0 dBm的注入功率产生529至534 GHz的输出频率。所建议的相控阵在531.5 GHz时可实现-12dBm的辐射功率和0.24%的直流至太赫兹(THz)效率,而无需使用硅透镜,石英基板或基板变薄。该芯片消耗260 mW的直流功率,并占用2.5 mm(2)的面积。

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