首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3$sigma$) and a Resolution FoM of 0.43 pJ$cdot$<
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A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3$sigma$) and a Resolution FoM of 0.43 pJ$cdot$<

机译:精度为0.12°C的紧凑型基于电阻器的CMOS温度传感器(3 $ sigma $ ),解析度FoM为0.43 pJ $ cdot $ <

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This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an$RC$poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF’s phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000$mu ext{m}~^{mathrm{ 2}}$. It can operate from supply voltages as low as 0.85 V and consumes 68$mu ext{W}$. A sensor based on a PPF made from silicided p-poly resistors and metal–insulator–metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3$sigma $) from −40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ$cdot ext{K}~^{mathrm{ 2}}$.
机译:本文提出了一种紧凑的基于电阻器的CMOS温度传感器,用于密集的热监控。它基于 n $ RC $ n多相滤波器(PPF),读取与温度有关的相移由锁频环(FLL)输出。 PPF的相移由零交叉(ZC)检测器确定,从而可以以节省面积的方式实现FLL的其余部分。该传感器采用65纳米CMOS技术实现,仅占用7000 n $ mu text {m}〜^ { mathrm {2}} $ n。它可以在低至0.85 V的电源电压下工作,消耗68 n $ mu text {W} $ n。基于由硅化p-poly电阻器和金属-绝缘体-金属(MIM)电容器制成的PPF的传感器实现了±0.12°C的精度(3 n $ sigma $ n)从−40°C到85°C,分辨率为2.5 mK(rms),转换时间为1 ms。这对应于0.43 pJ n $ cdot text {K}〜^ { mathrm {2}} $ n。

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