首页> 外文期刊>Solid-State Circuits, IEEE Journal of >POWER7™, a Highly Parallel, Scalable Multi-Core High End Server Processor
【24h】

POWER7™, a Highly Parallel, Scalable Multi-Core High End Server Processor

机译:POWER7™,高度并行,可扩展的多核高端服务器处理器

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

This paper gives an overview of the latest member of the POWER™ processor family, POWER7™. Eight quad-threaded cores, operating at frequencies up to 4.14 GHz, are integrated together with two memory controllers and high speed system links on a 567 mm$^{2}$ die, employing 1.2B transistors in a 45 $~$nm CMOS SOI technology with 11 layers of low-k copper wiring. The technology features deep trench capacitors which are used to build a 32 MB embedded DRAM L3 based on a 0.067 $mu$m$^{2}$ DRAM cell. The functionally equivalent chip transistor count would have been over 2.7B if the L3 had been implemented with a conventional 6 transistor SRAM cell. (A detailed paper about the eDRAM implementation will be given in a separate paper of this Journal). Deep trench capacitors are also used to reduce on-chip voltage island supply noise. This paper describes the organization of the design and the features of the processor core, before moving on to discuss the circuits used for analog elements, clock generation and distribution, and I/O designs. The final section describes the details of the clocked storage elements, including special features for test, debug, and chip frequency tuning.
机译:本文概述了POWER™处理器家族的最新成员POWER7™。八个工作在高达4.14 GHz频率的四线程内核与两个内存控制器和高速系统链接集成在一个567 mm $ ^ {2} $芯片上,在45个$〜$ nm CMOS中采用1.2B晶体管SOI技术具有11层低k铜布线。该技术具有深沟槽电容器,该电容器用于基于0.067μm$ m {2} $ DRAM单元构建32 MB嵌入式DRAM L3。如果L3已用传统的6晶体管SRAM单元实现,那么功能等效的芯片晶体管数将超过2.7B。 (有关eDRAM实现的详细论文将在本期刊的另一篇论文中给出)。深沟槽电容器还用于降低片上电压岛电源噪声。在继续讨论用于模拟元件,时钟生成和分配以及I / O设计的电路之前,本文描述了设计的组织和处理器内核的功能。最后一部分描述了时钟存储元件的细节,包括用于测试,调试和芯片频率调谐的特殊功能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号