Exploring the performance limiting parameters of perovskite solar cell through experimental analysis and device simulation

摘要

A perovskite heterojunction solar cell is fabricated with architecture of hole transport material (HTM) free discrete electrode. The morphological, structural and optical properties are studied by FESEM, XRD and UV-Vis spectrophotometry techniques. A single diode model has been used to investigate the cell characteristics. The interface between TiO2 and CH3NH3PbI3 layer is found analogous to Schottky diode that acts as a heterojunction for excitation and dissociation of charge carriers due to the existence of an internal electric field at the junction. The SCAPS simulation is done to explore the role of interface defects and band offsets. Device simulation has shown an improvement of 16%, 6% and 25% in V-OC, FF and eta respectively with incorporation of the HTM layer in device structure. (C) 2015 Elsevier Ltd. All rights reserved.