Correlation between electrical resistivity and optical transmittance of Mg- and Ga-doped ZnO window layers in NIR-IR region and its effect on current density of kesterite solar cells

摘要

The doping of Mg and Ga into ZnO is a method for obtaining excellent optical and electrical properties for a window layer in an inorganic solar cell. Because a tradeoff exists between the electrical and optical properties in the window layer, balancing them is important for enhancing the performance of the solar cells. From this viewpoint, the thickness change of the window layer affects the transmittance and the conductivity. In particular, it affects the transmittance in the NIR-IR region significantly, which can enhance the current collection but lead to poor conductivity when the transmittance of the window layer is increased. We examine the thickness effect of MGZO films for CZTSSe solar cells in order to determine the optimal conversion efficiency. The enhanced transmittance in the NIR-IR region with a thin MGZO layer contributed to a high current density, although the electrical resistivity was relatively high. An enhanced conversion efficiency of 7.54% was eventually recorded for an optimal thickness of the MGZO layer with an improved current density over 7 mA/cm(2).