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首页> 外文期刊>Solar Energy >Facile designing and assessment of photovoltaic performance of hydrothermally grown kesterite Cu_2ZnSnS_4 thin films: Influence of deposition time
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Facile designing and assessment of photovoltaic performance of hydrothermally grown kesterite Cu_2ZnSnS_4 thin films: Influence of deposition time

机译:水热生长方钴矿Cu_2ZnSnS_4薄膜的光伏性能设计与评估:沉积时间的影响

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摘要

Herein, low cost precursor source Cu2ZnSnS4 (CZTS) nanocrystalline thin films at various reaction time were successfully synthesized via one step hydrothermal route. Hydrothermal route was employed to achieve control over the size and grain growth of CZTS films. As deposited CZTS films were analyzed for its optoelectronic, structural, morphological and electrochemical properties to investigate the effect of hydrothermal reaction time on growth and photovoltaic performance. The hydrothermal synthesis promoted to high absorption (104 cm(-1)) of the CZTS film with a decrease in optical band gap energy from 1.52 eV to 1.41 eV. Structural study revealed that, improved crystallinity with A1 mode of vibration for pure phase kesterite CZTS structure. Morphological transition was observed from nanograins to well grown and compact nanospheres. Compositional analysis illustrates, stoichiometric CZTS film formation with the desired valence state of Cu+, Zn2+, Sn4+ and S2- elements. Current density-voltage (J-V) measurement of FTO/CZTS/(0.3 M Eu3+/Eu2+)/Graphite cell configuration shows, highest photocurrent of 2.60 mA/cm(2) and open circuit voltage of 754 mV was observed for CZTS(4) sample with best photoconversion efficiency (eta) 3.21% under illumination of 30 mW/cm(2) light intensity. Electron impedance spectroscopy (EIS) showed that, generation of lower charge transfer resistance (Rct) with increase in reaction time.
机译:本文通过一步水热法成功合成了各种反应时间的低成本前驱体源Cu 2 ZnSnS 4(CZTS)纳米晶薄膜。采用水热法来控制CZTS薄膜的尺寸和晶粒长大。分析沉积的CZTS薄膜的光电,结构,形态和电化学性质,以研究水热反应时间对生长和光伏性能的影响。水热合成促进了CZTS薄膜的高吸收(104 cm(-1)),并且光学带隙能量从1.52 eV降低到1.41 eV。结构研究表明,采用纯铝硅藻土CZTS结构的A1振动模式可提高结晶度。观察到从纳米颗粒到生长良好且紧密的纳米球的形态学转变。成分分析表明,化学计量的CZTS膜具有所需的Cu +,Zn2 +,Sn4 +和S2-元素价态。 FTO / CZTS /(0.3 M Eu3 + / Eu2 +)/石墨电池配置的电流密度-电压(JV)测量显示,对于CZTS(4),观察到最高光电流为2.60 mA / cm(2),开路电压为754 mV。在30 mW / cm(2)的光照强度下具有最佳光转换效率(eta)3.21%的样品。电子阻抗谱(EIS)表明,随着反应时间的增加,电荷转移电阻(Rct)的降低。

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