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Step-by-Step Solution of One-Dimensional Quantum-Mechanical Problem in Process of Nano-Technological Educations

机译:纳米技术教育过程中的一维量子力学问题的分步解决方案

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In education process exist a problem of create of ability of establishing of connections between properties of real physical object and mathematical model describing such properties. We propose the solution of this problem which is based on a studying of correlation between physical properties of nano-crystal vanadium dioxide thin films and details of quantum-mechanical model of a one-dimensional chain hydrogen-like atoms describing these properties. The main accent is made here on gradual complication of the description of the semiconductor - metal phase transition at T_c = 68℃ which occurs in nano-crystal grains of VO_2-thin films. Consideration in educational process of the nature of phase transition begins on the solution of one-dimensional quantum-mechanical problem, and comes to end with concept of correlation energy and discussion of Mott-idea about dependence of position of energy zones on their electron occupation.
机译:在教育过程中,存在一个建立能力的问题,该能力建立了真实物理物体的属性和描述这种属性的数学模型之间的联系。我们基于研究纳米二氧化钒薄膜的物理性质与描述这些性质的一维链状氢原子的量子力学模型之间的相关性,提出了解决该问题的方案。这里的主要重点是逐步描述在VO_2薄膜的纳米晶粒中出现的T_c = 68℃时半导体-金属相变的描述。在教育过程中,对相变性质的考虑始于一维量子力学问题的解决,最后以相关能量的概念和关于能量区位置对其电子占有率的依赖性的Mott-idea的讨论结束。

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