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Stress-Endurable Temperature Sensor Designed for Temperature Compensation on a Pressure Sensor

机译:专为压力传感器的温度补偿而设计的耐应力温度传感器

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摘要

In this paper, the mechanical properties and temperature characteristics of a temperature sensor are presented for effective temperature compensation of a pressure sensor with a silicon strain gauge. A p-type diffused resistor of <100> direction on the (001) plane acts as a temperature sensor because its resistance varies with temperature. Unlike typical temperature sensors, the sensor's resistance is not affected by the stress on the diaphragm caused by its deformation under pressure. Thus, the temperature sensor is able to provide the correct resistance value corresponding to the temperature, regardless of the position of the diaphragm. Only 0.0062% of the resistance change of the temperature sensor is attributable to the mechanical stress of the diaphragm's deformation.
机译:在本文中,提出了一种温度传感器的机械性能和温度特性,可有效补偿带有硅应变计的压力传感器的温度。 (001)方向上<100>方向的p型扩散电阻器用作温度传感器,因为其电阻随温度变化。与典型的温度传感器不同,传感器的电阻不受膜片在压力下变形引起的应力影响。因此,无论膜片的位置如何,温度传感器都能够提供与温度相对应的正确的电阻值。温度传感器的电阻变化只有0.0062%可归因于膜片变形的机械应力。

著录项

  • 来源
    《Sensors and materials》 |2015年第1期|125-133|共9页
  • 作者单位

    Department of Sensor and Display Engineering, Kyungpook National University, Daegu 702-701, Korea;

    Department of Engineering Technology Electronic Materials Engineering, Kyungpook National University, Daegu 702-701, Korea;

    School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea;

    Department of Sensor and Display Engineering, Kyungpook National University, Daegu 702-701, Korea;

    School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea;

  • 收录信息 美国《科学引文索引》(SCI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    temperature sensor; thermistor; MEMS; silicon strain gauge; pressure sensor;

    机译:温度感应器;热敏电阻MEMS;硅应变计压力传感器;

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