175$^circhboxC$Silicon-Based Hybrid Charge Amplifier for 175$^circhboxC$and 100-mV/G Miniature Piezoelectric Accelerometer

摘要

High-temperature hybrid miniature silicon-based charge amplifier has been designed, fabricated, and tested. The charge gain$G_q approx 30 hboxmV/pC pm 1 hboxdB$at the reference frequency of 100 Hz. Frequency response deviation is$pm$1 dB at frequency range from about 0.5 Hz to about 10 kHz over the temperature range from$-55 ^circhboxC$to$175 ^circhboxC$. The maximum change in gain is$pm$5% over that temperature range. The maximum output signal is 5 V peak at voltage supply of$+$24 V. The charge amplifier compromises standard components, and it is built on the ceramic disk substrate with a diameter of about 8 mm. This circuit made possible the development of the industry's first 100-mV/G miniature (cube with side of 14 mm), lightweight (12.5 g), low-cost, and low-noise piezoelectric triaxial accelerometer with integral silicon-based electronics having operating temperature from$-55 ^circhboxC$to$175 ^circhboxC$. In the long-term active (with power supply) test, the circuit and the accelerometer operated at temperature of 175$^circhboxC$for 1000 h without any signs of degradation.