Characterization of ozone sensors based on WO_3 reactively sputtered films: influence of O_2 concentration in the sputtering gas, and working temperature

摘要

We report on electrical responses of tungsten oxide thin film ozone sensors based on a tungsten trioxide (WO_3)/tin oxide (SiO_2)/Si structure with interdigitated Pt electrodes. The influence of O_2 concentration in the sputtering gas and working temperature of the sensor are investigated. Sensitivity to ozone increases with O_2 content in the sputtering gas. It reaches its highest value for sensors fabricated with 50% O_2. For these sensors, the best ozone sensitivity and shortest response and recovery times are obtained at a working temperature of 523 K. Ozone sensitivity is compared to other ozone sensors.