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首页> 外文期刊>Sensors and Actuators >Label-free photoelectrochemical immunosensor for carcinoembryonic antigen detection based on g-C_3N_4 nanosheets hybridized with Zn_(0.1)Cd_(0.9)S nanocrystals
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Label-free photoelectrochemical immunosensor for carcinoembryonic antigen detection based on g-C_3N_4 nanosheets hybridized with Zn_(0.1)Cd_(0.9)S nanocrystals

机译:基于与Zn_(0.1)Cd_(0.9)S纳米晶体杂交的g-C_3N_4纳米片的用于癌胚抗原检测的无标记光电化学免疫传感器

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HighlightsA novel photoelectrochemical immunosensor for the detection of CEA was designed.G-C3N4nanosheets provide high specific surface for Zn0.1Cd0.9S growth.Heterojunction structure accelerates separation of photoexcited electron-hole pairs.Zn0.1Cd0.9S/g-C3N4nanocomposite performs outstanding photoelectrochemical activity.AbstractA label-free photoelectrochemical (PEC) immunosensor for carcinoembryonic antigen (CEA) detection was developed using two-dimensional (2D) ultrathin graphitic carbon nitride (g-C3N4) nanosheets hybridized with Zn0.1Cd0.9S nanocrystals as the photoactive matrix. The g-C3N4ultrathin nanosheets, which are 2D conjugated polymers, were synthesized through a thermal polymerization-exfoliation method that can generate a high specific surface area. Next, the Zn0.1Cd0.9S nanocrystals was successfully grown on the g-C3N4ultrathin nanosheets (Zn0.1Cd0.9S/g-C3N4), forming a well-matched band structure where the presence of Zn0.1Cd0.9S/g-C3N4accelerated the separation and transfer of photogenerated electron-hole pairs. The as-synthesized Zn0.1Cd0.9S/g-C3N4composites showed excellent photoelectrochemical activity, considerably higher than that of pure Zn0.1Cd0.9S and g-C3N4. It was worth noting that the heterojunction with strong interfacial interaction formed between Zn0.1Cd0.9S and g-C3N4was adopted in the construction of an immunosensor for the first time. CEA antibody (anti-CEA) was immobilized on the surface of a modified electrode using a chemical bonding effect, with mercaptoacetic acid (MPA) and EDC/NHS being used as bridging media. The highly specific introduction of CEA resulted in increased steric hindranceviathe antigen-antibody specific immunoreaction; Thus, the concentrations of CEA could be detected by observing the decrease in photocurrent. Under optimal conditions, the linear range for the immunosensor was from 0.005ngmL−1to 20ngmL−1. The detection limit was 1.4pgmL−1.
机译: 突出显示 < ce:list-item id = “ lsti0005 ”> 一种新型的光电电化学免疫传感器设计了CEA检测。 GC 3 N 4 < / ce:inf>纳米片为Zn 0.1 Cd 0.9 S增长。 异质结结构可加速光激发电子的分离ron-hole对。 Zn 0.1 Cd 0.9 S / gC 3 N 4 纳米复合材料具有出色的光电化学性能活动。 摘要 使用两种方法开发了用于癌胚抗原(CEA)检测的无标记光电化学(PEC)免疫传感器。 (2D)超薄石墨氮化碳(gC 3 N 4 ) Zn 0.1 Cd 0.9 S纳米晶体作为光敏基质。 gC 3 N 4 超薄素纳米片,它们是二维共轭聚合物,通过热聚合-剥离法合成可以产生高比表面积的合成物。接下来,Zn 0.1 Cd 0.9 S纳米晶体成功地生长在gC 3 N 4 超薄素纳米片(Zn 0.1 Cd 0.9 S / gC 3 < / ce:inf> N 4 ),形成匹配良好的能带结构,其中Zn 0.1 Cd 0.9 S / gC 3 N 4 加速了光生电子-空穴对的分离和转移。合成后的Zn 0.1 Cd 0.9 S / gC 3 N 4 复合材料显示出优异的光电化学活性,远高于纯Zn < ce:inf loc = “ post ”> 0.1 Cd 0.9 S和gC 3 N 4 。值得注意的是,Zn 0.1 Cd 0.9 S和gC 3 N 4 被采用第一次使用免疫传感器。使用化学键合效应将CEA抗体(抗CEA)固定在修饰电极的表面,巯基乙酸(MPA)和EDC / NHS用作桥接介质。 CEA的高度特异性引入通过抗原-抗体特异性免疫反应导致空间位阻增加。因此,可以通过观察光电流的减少来检测CEA的浓度。在最佳条件下,免疫传感器的线性范围为0.005ngmL -1 到20ngmL − 1 。检出限为1.4pgmL − 1

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