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Monte Carlo simulation of electromigration in polycrystalline metal stripes

机译:多晶金属条中电迁移的蒙特卡罗模拟

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We have developed a Monte Carlo simulator of the electromigration process in polycrystalline metal stripes. Stripes with different average grain size can be generated with Voronoi tesselation, and mapped onto a network of resistors. The proposed model includes the major role played by grain boundaries and by the current density redistribution within the stripe following void formation. Simulations of stripes with different grain sizes and different widths are shown, and a few expressions for the failure probability are compared on the basis of their capability of reproducing the experimental results. In addition, electromigration noise has been computed, recovering the characteristic 1/f~γ (γ se 2) behaviour. The substantial qualitative agreement between our calculations and the experimental results is a convincing test of the capability of the model proposed to include the relevant physics.
机译:我们已经开发了多晶金属条中电迁移过程的蒙特卡洛模拟器。可以用Voronoi镶嵌生成具有不同平均晶粒尺寸的条纹,并将其映射到电阻器网络上。所提出的模型包括晶界和空隙形成后条纹内电流密度的重新分布所起的主要作用。显示了具有不同晶粒尺寸和不同宽度的条带的模拟,并基于其再现实验结果的能力,比较了几种失效概率表达式。另外,已经计算出电迁移噪声,恢复了特征1 / f〜γ(γse 2)的行为。我们的计算与实验结果之间的实质性定性一致性,是对所提议模型包括相关物理的能力的令人信服的测试。

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