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Effect of deposition temperature on the optical and structural properties of as-deposited CulnS_2 films

机译:沉积温度对沉积的CulnS_2薄膜光学和结构性能的影响

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Structural and optical properties of thin films CuInS_2 grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The depositions were carried out at substrate temperatures in the range 65-295 ℃. We obtain CuInS_2 layers with high structural quality by growing at T_s ≈ 140 ℃ with the presence of an amorphous component and at T_s ≈ 240 ℃ with formation of In and Cu_7In_4 as minority phases. From the optical transmission and reflection an optical absorption coefficient of 3 × 10~4-10~5 cm~(-1) for λ < 1000 nm was calculated for the films deposited at T_s > 200 ℃. Analysis of the absorption coefficient data revealed the existence of several energy gaps, direct and forbidden direct gaps. The direct gaps lie between 1.38 and 2.20 eV and the forbidden direct gaps are in the 0.61-1.97 eV range. The effect of the substrate temperatures on the grain size and surface roughness has been studied. It has been shown that the substrate temperatures T_s ≈ 140 ℃ and T_s ≈ 240 ℃ yield maxima of the grain size and minima of the surface roughness.
机译:已经研究了通过热蒸发生长的薄膜CuInS_2的结构和光学性质,并将其与衬底加热条件的影响联系起来。沉积是在65-295℃的衬底温度下进行的。通过在T_s≈140℃时存在无定形成分,在T_s≈240℃时以In和Cu_7In_4的形成为少数相,可以得到具有高结构质量的CuInS_2层。根据光透射和反射,对于在T_s> 200℃沉积的薄膜,对于λ<1000 nm的光吸收系数为3×10〜4-10〜5 cm〜(-1)。对吸收系数数据的分析表明存在多个能隙,即直接和禁止的直接间隙。直接间隙在1.38和2.20 eV之间,禁止的直接间隙在0.61-1.97 eV范围内。研究了衬底温度对晶粒尺寸和表面粗糙度的影响。结果表明,基板温度T_s≈140℃和T_s≈240℃会产生最大的晶粒尺寸和最小的表面粗糙度。

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