Control of density, size and size uniformity of MBE-Grown InAs quantum dots by means of substrate misorientation

摘要

the influence of (001) GaAs substrate misorientation in the [001] direction on the parameters of InAs quantum dot (QD0 ensembles has been studied by means of atomic force microscopy. It is shown that terrace patterning on vicinal surfaces permits control over the density, size and size uniformity of InAs QDs during their growth in the Stranski-Krastanow mode. By using The Monte Carlo approach for simulating the surface annealing, it was Shown that surface misorientation exhibits a stable tendency towards Elf-organization of undulate structure.