Prediction of a realistic quantum logic gate using the contact block reduction method

摘要

We present a theoretical study of the realization of a quantum logic gate based on a laterally structured high mobility GaAs/AlGaAs 2DEG. The Ⅰ―Ⅴ characteristics exhibit a pronounced switching behaviour which demonstrates that quantum logic gates can be fabricated and operated experimentally. The calculations have been performed with the recently developed contact block reduction method. We show that this method can be readily extended to multi-band k · p-Hamiltonians while retaining its efficiency.