A high-power solid-state p~+-n-n~+ diode for picosecond-range closing switching

摘要

The solid-state delayed breakdown diode (DBD) is investigated in this paper. Special attention is given to the internal dynamics and physical nature that underlie the delayed breakdown process. We investigate the source of initial carriers which trigger the front, explain the origin of the time delay in triggering the front, and detail the mechanism of front propagation. Then, a Si-based DBD with an improved three-step gradually changing doping structure is reviewed in this paper. The output voltage of an identical-sized improved DBD has been shown to increase from 2.12 kV to 2.25 kV and the dV/At peak of the output voltage has been increased from 30 kV ns~(-1) to 43.87 kV ns~(-1) with the same driving voltage through two-dimensional device simulations. Finally, a Si/SiGe heterojunction DBD with high-speed capability for picosecond switching is presented. Switch speed of the identical-sized Si/SiGe DBD (144.9 kV ns~(-1)) appears to be more than four times higher than that of the conventional Si device (30 kV ns~(-1)).