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Low-voltage top-emitting organic light-emitting devices with an organic double-heterojunction structure

机译:具有有机双异质结结构的低压顶部发射有机发光器件

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We demonstrate low-voltage top-emitting organic light-emitting devices with a narrow recombination zone confined by an organic double-heterojunction structure. The devices had a configuration of Al/Glass/ ITO/m-MTDATA/NPB/Alq(3)/TPBI/Alq(3)/LiF/Al/Ag. In these devices, 4,4',4 ''-tris(3-methylphenylphenylamino)-triphenylamine (m-MTDATA), N,N'-bis-(I-naphthyl)-N,N'-diphenyl-1,1'-biph-enyl-4,4'-diamine (NPB), 2,2',2 ''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI) and tris (8-hydroxyquinoline) aluminium (Alq(3)) were used as the hole injection, hole transporting, hole blocking and emission/electron-transporting layers, respectively. They exhibit low driving voltages, for instance, similar to 200 cd m(-2) at the voltage of 4 V. The maximum efficiency and luminance of the device are 1.628 cd A(-1) and 9573 cd m(-2).
机译:我们展示了具有由有机双异质结结构限制的狭窄复合区的低压顶部发射有机发光器件。该设备的配置为Al /玻璃/ ITO / m-MTDATA / NPB / Alq(3)/ TPBI / Alq(3)/ LiF / Al / Ag。在这些设备中,4,4',4''-三(3-甲基苯基苯基氨基)-三苯胺(m-MTDATA),N,N'-双-(I-萘基)-N,N'-二苯基-1,1 '-biph-enyl-4,4'-diamine(NPB),2,2',2''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole)(TPBI)和tris(使用8-羟基喹啉铝(Alq(3))分别作为空穴注入,空穴传输,空穴阻挡和发射/电子传输层。它们表现出较低的驱动电压,例如在4 V电压下类似于200 cd m(-2)。该器件的最大效率和亮度为1.628 cd A(-1)和9573 cd m(-2)。

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