Interfacial growth at the HfO_2/Si interface during annealing in oxygen ambient

摘要

The growth of an interfacial layer (IL) at the HfO_2/Si interface during annealing in oxygen ambient was investigated using x-ray photoelectron spectroscopy. It is found that the IL grows linearly at low annealing temperatures (<600 ℃) but nonlinearly at high ones (≥600 ℃). This is caused by the crystallization of the HfO_2 layer and the Si emission from substrates. The influences of the HfO_2 thickness and the oxygen pressure on the interfacial growth were also evaluated.