The effect of a material growth technique on ion-implanted Mn diffusion in GaAs

摘要

Diffusion of ion-implanted Mn in semi-insulating (SI) and liquid encapsulated Czochralski (LEC)-grown GaAs has been determined employing the modified radiotracer technique. The effect of the growth technique and conditions on Mn diffusion in low temperature molecular beam epitaxy (LT-MBE)-grown GaAs has also been studied. Two distinct diffusion components appear in ion-implanted Mn diffusion in GaAs: slow and fast. As the diffusivity for the SI material is slightly higher than that for the LT-grown material, it is observed that the diffusivity of the fast component retards with increasing initial concentrations of Ga sublattice defects. At the same time the Mn concentration in the tail part of the diffusion profile is higher in the LT-grown material. Ga vacancy-assisted clustering of Mn is proposed as a likely reason for the observed effects.