Electrical Properties Of Stacking Electrodes For Flexible Crystalline Semiconductor Photonic Devices

摘要

We report here electrical properties of low-temperature-stacked electrodes for large-area flexible photonic devices, based on single-crystalline InP nanomembrane (NM) transfer and stacking processes. Au, Al and ITO electrodes were investigated. An excellent ohmic contact was demonstrated on the stacked InP NM-ITO electrode, with a measured contact resistivity of 0.45 Q cm2. Two types of flexible InP solar cells were also fabricated and characterized, based on the stacked InP NM-ITO and InP NM-A1 contacts, respectively. The efficiency of solar cells with ITO as back contact is five times higher than that with Al as back contact. Such low-temperature energy-efficient NM transfer and electrode-stacking techniques can be applied to a wide range of flexible thin film photonic devices.