High-efficiency InGaN/GaN light-emitting diodes with electron injector

摘要

The efficiency in non-polar m-plane InGaN/GaN light-emitting diodes (LEDs) with an electron injector (El) layer was investigated using multiband effective mass theory. The electron overflow is shown to decrease with the inclusion of an electron-blocking layer. In particular, with the inclusion of the El layer, the electron overflow is significantly reduced even for a large bias voltage. In the case of the single El layer, the layer thicker than 13 nm would be needed to reduce electron overflows substantially. However, it will be difficult to grow epitaxially high-quality thick single El layer. Instead, we show that the quantum-well structure with the superlattice-like El layer is more effective in reducing the ballistic and quasiballistic electron transport across the active region, compared with a thick single El layer.