Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing

摘要

We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annealing of NiGeAu multilayers. Energy dispersive x-ray spectroscopy indicates that in specific annealing conditions a sharply-defined Au-rich phase can be obtained in the vicinity of the metallic contacts. Charge transport characteristics are analyzed for different degrees of diffusion of the Au-rich phase in the wire and indicate that it has a metallic nature. The mechanism behind this local post-growth modification of the nanowire composition and its potential impact on device applications are discussed.