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Linear and non-linear optical properties of Ag-doped Ge2Sb2Te5 thin films estimated by single transmission spectra

机译:单透射光谱估计的掺Ag的Ge2Sb2Te5薄膜的线性和非线性光学性质

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摘要

In this paper we have studied the effect of Ag addition on linear and non-linear optical properties of thermally evaporated (Ge2Sb2Te5) 100-Ag-x(x) (x = 0, 1, 3 and 10) thin films (thickness similar to 700 nm) from single transmission spectra. Energy dispersive spectroscopy, x-ray diffraction and Raman spectroscopy were used to verify the composition, amorphous nature and structure of the fabricated thin films respectively. Swanpoel's method was used to calculate the thickness (d), refractive index (n) and extinction coefficient (k). The refractive index and extinction coefficient were used to obtain all linear and non linear optical parameters. The compositional dependence of the refractive index, extinction coefficient, volume energy loss function, surface energy loss function, dielectric constant, dielectric loss function, optical conductivity and third order non-linear optical susceptibility were determined. All these optical parameters have minimum values for 3% Ag-doped Ge2Sb2Te5 (GST). The decrease in measured optical parameters up to 3% Ag doping is due to a decrease in the density of localized states in the mobility gap. The increase in the optical parameters at 10% Ag doping was ascribed to the distortion of the host lattice, because incorporation of Ag has been done at the expense of Ge, Sb and Te. The optical parameters of the GST films were found to be strongly dependent upon Ag content. The results revealed that 3% Ag-doped GST is a promising candidate for phase change optical storage applications.
机译:在本文中,我们研究了Ag的添加对热蒸发(Ge2Sb2Te5)100-Ag-x(x)(x = 0、1、3和10)薄膜(厚度类似于)的线性和非线性光学性质的影响。 700 nm)。用能谱,X射线衍射和拉曼光谱分别验证了所制备薄膜的组成,非晶性质和结构。使用Swanpoel方法计算厚度(d),折射率(n)和消光系数(k)。折射率和消光系数用于获得所有线性和非线性光学参数。确定了折射率,消光系数,体积能量损失函数,表面能量损失函数,介电常数,介电损耗函数,光学导率和三阶非线性光学磁化率的组成相关性。所有这些光学参数均具有3%的Ag掺杂Ge2Sb2Te5(GST)的最小值。高达3%的Ag掺杂所测得的光学参数下降是由于迁移率间隙中局部态密度的下降所致。 Ag掺杂量为10%时,光学参数的增加归因于主体晶格的变形,因为掺入Ag是以牺牲Ge,Sb和Te为代价的。发现GST膜的光学参数强烈依赖于Ag含量。结果表明,掺有3%Ag的GST是相变光存储应用的有希望的候选者。

著录项

  • 来源
    《Semiconductor science and technology》 |2017年第4期|045015.1-045015.10|共10页
  • 作者单位

    Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India|Punjabi Univ, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India;

    Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Waknaghat 173234, Solan, India;

    Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Waknaghat 173234, Solan, India;

    Punjabi Univ, Dept Basic & Appl Sci, Adv Mat Res Lab, Patiala 147002, Punjab, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    chalcogenide; refractive index; extinction coefficient; phase change;

    机译:硫属化物;折射率;消光系数;相变;

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