Performance of Hg(1-x)CdxTe infrared focal plane array at elevated temperature

摘要

The simulated optical and electrical performance of the infrared HgCdTe focal plane array (FPA) for elevated operation temperature is reported. The depleted absorber layer is explored for equilibrium mode of operation up to 160 K. A resonant cavity is created to improve photon-matter interaction and hence, reduces the required absorption volume. The volume of the active region of HgCdTe detector is reduced by 70% in this manner. Dark current density is decreased without compromising the quantum efficiency. The effect of the reduced band filling effect leading to higher absorption coefficient and more efficient utilization of incident flux is employed. High quantum efficiency is achieved in a thin compositionally graded n(+)/nu/pi/p HgCdTe photo-diode. This architecture helps to minimize the requirement of charge handling capacity in the CMOS read-out integrated circuit (ROIC) as the operation temperature is increased. Quantum efficiency similar to 30% or above is shown to be sufficient for Noise Equivalent Temperature Difference (NETD) less than 20mK with the reported design.