机译:能带反交叉对ZnSe1-xOx合金带隙温度依赖性的影响
Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland|Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland;
Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland;
Univ Yamanashi, Dept Elect Engn, Takeda 4-3-11, Kofu, Yamanashi 4008511, Japan;
Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;
band anticrossing; highly mismatched alloys; ZnSeO; band gap temperature dependence;
机译:由改进的带逆向模型描述的Sb富含GabixSB1-X合金(0x0.26)的带隙能量的组成依赖性
机译:Ingapn合金中带抗交叉的温度相关参数
机译:室温光致发光对Ge_(1-y)Sn_y合金中直接和间接带隙的成分依赖性:本征和n型材料中间接到直接间隙交叉的含义
机译:利用量子介电理论和价带反交叉模型计算的GaP1-xBix能带隙特征
机译:高度不匹配的半导体合金中的带抗交叉效应。
机译:使用价带反交叉模型计算的InAs1-xBix和InSb1-xBix合金半导体的价带结构
机译:GaAsN合金的带隙能的温度依赖性