Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure

摘要

The paper considers relaxation-vibrational processes in silicon samples with nickel impurities, which create deep energy levels in its forbidden zone, during pulsed hydrostatic compression. The experiments were carried out under the direct influence of hydrostatic compression. Theoretical calculations showed that an increase in the temperature of the studied samples during dynamic compression is mainly associated with a change in the temperature of the surrounding liquid. The resulting differential equation shows that at dynamic pressure (at high rates of increase in hydrostatic pressure), wave thermodynamic processes arise. It was experimentally found that in silicon samples with deep impurity levels at pulsed hydrostatic pressure, in addition to the temperature effect, vibration-wave effects also appear. We have also shown experimentally that the relaxation part of the relative change in the current strongly depends on the degree of compensation. With weak compensation, the relaxation part is almost absent. And with strong compensation, the relaxation part of the relative change in compensated samples n-Si P, Ni is noticeably higher than in overcompensated samples p-Si P, Ni.