Improvement of p-electrode structures for 280 nm AlGaN LED applications

摘要

An improvement of Ni/Au/p(+)-GaN p-electrode for AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength of 280 nm is proposed for both p-side-up and flip-chip structures. An interdigitated multi-finger Ni/Au was employed in p-side-up DUV LED, where the p-GaN contact layer was partially removed to improve the light extraction efficiency without a serious current-crowding effect. The 9- and 12-finger LEDs were determined to have higher thermal dissipation and lower surface temperatures and correlated well with the theoretical simulation. For the comparison of p-side-up emission LEDs, the output power of 9-finger LED is 172% higher than that of conventional LED at the current injection of 350 mA. The optimum p-electrode pattern was further applied to the flip-chip LED structure. It is determined that the output power of 9-finger flip-chip LED at 350 mA is still 14.6% higher than that of a conventional flip-chip LED. The higher output power of 9-finger flip-chip LED with a wall-plug efficiency of 1.05% is attributed to the combination of the improved current-spreading path and the higher reflection through the moderate removal of partial p(+)-GaN absorbing layer.